Gallium nitride (GaN) is an advanced semiconductor material enabling more efficient, compact, and high-performance electronic systems

, for example in electromobility, energy technology, and communications. The associated high power densities and operating temperatures impose significant challenges on the reliability of these components.

Within the EU-funded collaborative project All2GaN Chemnitzer Werkstoffmechanik GmbH contributes to the reliability and robustness assessment of GaN-based systems.

A key focus is the development of a software-based methodology for the calibration and validation of thermo-mechanical FEM simulations of microelectronic systems. By systematically correlating simulation results with experimental data from optical in-situ deformation analysis using microDAC TL and VEDDACVEDDAC, a realistic evaluation of component behavior under operating conditions is achieved. This work is carried out in close collaboration with Technische Universität Chemnitz.

Another focus is the advancement of optical in-situ deformation analysis with microDAC TL and VEDDAC for novel interconnection technologies, particularly under elevated temperature conditions. The goal is to generate reliable in-situ measurement data under demanding thermal environments to enable detailed analysis of failure mechanisms.

Using DIC and DVC methods, CWM provides essential data to project partners, including material properties, compound parameters, and defect signatures. These data form the basis for a robust "Virtual Design for Reliability" and support targeted optimization of GaN-based systems already in early development phase.